OP123【PDF 2/4 页】DIODE IR EMITTING GAAS PILL PAK

您好，
买卖IC网欢迎您。
请登录
免费注册

1页 [2页]3页 4页

Hermetic Infrared Emitting Diode

OP123, OP124

OP223, OP224

Absolute Maximum Ratings (T A =25°C unless otherwise noted)

Storage Temperature Range

Operating Temperature Range

Reverse Voltage

Continuous Forward Current

Peak Forward Current (2μs pulse with 0.1% duty cycle)

Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]

Power Dissipation

Electrical Characteristics (T A = 25 ° C unless otherwise noted)

-65 o C to +150 o C

-65 o C to +125 o C

2.0 V

100 mA

1.0 A

260° C (1)(2)

150 mW (3)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Input Diode

Apertured Radiant Incidence

E E (APT)(3)

OP123

OP124

OP223

OP224

0.40

1.00

1.00

3.50

-

-

-

-

-

-

-

-

mW/cm 2 I F = 50 mA (4)

Forward Voltage

V F

I R

OP123

OP124

Reverse Current

-

-

-

-

-

-

1.50

1.80

100

V

μA

I F = 50 mA

V R = 2.0 V

Wavelength at Peak Emission

λ P

OP123, OP124

OP223, OP224

-

-

935

890

-

-

nm

I F = 50 mA

I F = 10 mA

Spectral Bandwidth between Half Power

B

Points OP123, OP124

OP223, OP224

-

-

50

80

-

-

nm

I F = 50 mA

I F = 10 mA

Spectral Shift with Temperature

?λ P / ? T

OP123, OP124

OP223, OP224

-

-

+0.30

+0.18

-

-

nm/°C

I F = Constant

θ HP

Emission Angle at Half Power Points

-

24

-

Degree I F = 50 mA

Output Rise Time

t r

t f

OP123, OP124

OP223, OP224

Output Fall Time

OP123, OP124

OP223, OP224

-

-

-

-

1000

500

500

250

-

-

-

-

ns

ns

I F(PK) =100 mA, PW=10 μs, and

D.C.=10.0%

Notes:

1. Refer to Application Bulletin 202 which reviews proper soldering techniques for pill-type devices.

2. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.

3. Derate linearly 1.50 mW/° C above 25° C.

4. For OP123, OP124, OP223 and OP224, E E(APT) is a measurement using a 0.031” (0.787 mm) diameter apertured sensor placed

0.50” (12.7 mm) from the measuring surface. E E(APT) is not necessarily uniform within the measured area.

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

Issue A 05/07

Page 2 of 4

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

OP133W DIODE IR HERMETIC FLAT GAAS TO46

OP140C DIODE IR PLASTIC GAAS SIDE LOOK

OP145D DIODE IR PLASTIC GAAS SIDE LOOK

OP166W DIODE IR PLASTIC GAAS FLAT T-1

OP224S DIODE IR HERMETIC GAAIAS PILL

OP230WPS DIODE INFRARED EMITTING HERMETIC

OP234W DIODE IR HS HP GAAIAS FLAT TO-46

OP235TXV DIODE IR EMITTING GAAIAS TO-46

相关代理商/技术参数

OP124 功能描述:红外发射源 Infrared 935nm RoHS:否制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk

OP-125G 制造商:Takachi Electric Industrial 功能描述:OP^JvX`bN{bNX 100~125~45mm ABS CgO[ Bulk

OP1270 制造商:OPTEK 制造商全称:OPTEK 功能描述:Axial Fiber Optic Isolator

OP-12AJG 制造商:未知厂家制造商全称:未知厂家功能描述:Voltage-Feedback Operational Amplifier

OP12AZ 制造商:Rochester Electronics LLC 功能描述:- Bulk

OP12BJ 制造商:未知厂家制造商全称:未知厂家功能描述:Voltage-Feedback Operational Amplifier

OP-12BJG 制造商:未知厂家制造商全称:未知厂家功能描述:Voltage-Feedback Operational Amplifier

OP12BZ 制造商:Analog Devices 功能描述: